NXP launches new PoE family

NXP Semiconductors launched a new family of NextPower Live MOSFETs designed specifically for PoE applications. Building on NXP's strength in power MOSFETs, the new devices – PSMN040-100MSE and PSMN075-100MSE – provide twice the level of inrush current capability of competitive offerings, making them ideal for high-power PoE architectures (30W and above) such as PoE+, UPoE and LTPoE++.

PoE is becoming an increasingly popular way of powering devices through an Ethernet cable/port rather than using a separate mains supply. Initially used for low-power devices such as VoIP phones, new approaches including UPoE and LTPoE++ are enabling higher power devices such as large LCD PoS displays and 3G/4G wireless access points to run at up to 100 W. However, in such high power environments, the power sourcing equipment (PSE) – such as a network router, switch or midspan – can suffer serious damage if a short circuit or fault in the powered device (PD) causes a power surge that is not controlled in time.

These new, higher power systems are placing greater demands on the MOSFETs used to supply and protect such equipment. NXP's new NextPower Live PoE MOSFETs have a safe operating area (SOA) that is twice as capable as existing solutions, providing higher levels of protection and system reliability.

NXP's new PoE devices also offer very low RDS(on) and come in the ultra-reliable LFPAK33 package, which is footprint-compatible with similar devices.

“Power over Ethernet is a rapidly evolving technology that requires every component in the PoE ecosystem to keep up if it's to be more widely adopted,” said Chris Boyce, MOSFET business manager, NXP Semiconductors. “New high-power standards require high-performance protection solutions. This new class of devices from NXP delivers twice the capability of existing PoE MOSFETs and we believe will play an important role in the ongoing adoption of high power PoE.” Links